Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit
نویسندگان
چکیده
منابع مشابه
Rapid Thermal Processing of Silicon Wafers with Emissivity Patterns
Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating methods. The work reported in this paper compares the effect of emissivity test patterns on wafers heated by two RTP methods: (1) a steadystate furnace ...
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Emissivity is a critical parameter in the rapid thermal processing ~RTP! of semiconductors for temperature control and thermal modeling. It is often considered as a material property that depends on the sample temperature and surface finishing. For a silicon wafer placed in a radiation environment such as a RTP chamber, however, the ambient photons emitted from lamps create electron-hole pairs ...
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The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures where Si is still in the brittle regime, the strain may accumulate if a microcrack is pinned. If a cr...
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ژورنال
عنوان ژورنال: Doklady BGUIR
سال: 2020
ISSN: 2708-0382,1729-7648
DOI: 10.35596/1729-7648-2020-18-7-79-86